| PART |
Description |
Maker |
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| K9GAG08U0F |
16Gb F-die NAND Flash
|
Samsung
|
| K9HDG08U5A K9GBG08U0A K9LCG08U1A |
32Gb A-die NAND Flash
|
Samsung
|
| K4B4G0846B K4B4G0846B-MCF7 K4B4G0846B-MCF8 K4B4G08 |
DDP 4Gb B-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| M378B5173BH0 |
240pin Unbuffered DIMM based on 4Gb B-die
|
Samsung
|
| HMT425S6MFR6C HMT425S6MFR6C-G7 HMT425S6MFR6C-H9 HM |
DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT41GA7MFR8A-G7 HMT41GA7MFR8A-H9 HMT41GA7MFR8A-PB |
DDR3L SDRAM ECC SO-DIMMs Based on 4Gb M-die
|
Hynix Semiconductor
|
| DOM40K3R1.5G DOM40K3R032 DOM40K3R512 DOM40K3R096 |
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| TS24MP320 TS2GMP320 |
2G/4G x8 Flash Memory
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TS2GMP650 |
2GB/4GB/8G USB Flash Drive
|
Transcend Information. Inc.
|
| TS512MUFM-V TS1GUFM-V TS2GUFM-V TS4GUFM-V |
512M~4GB USB Flash Module(Vertical)
|
Transcend Information. Inc.
|
